TlInS2 single crystals were grown by using Bridgman-Stockbauer
technique. Measurements of DC conductivity were carried out in parallel
(σ//) and perpendicular (σ⊥) directions to the
c-axis over a temperature range from 303 to 463 K. The anisotropic behaviour
of the electrical conductivity was also detected. AC conductivity and
dielectric measurements were studied as a function of both frequency
(102–106 Hz) and temperature (297–375 K). The frequency dependence
of the AC conductivity revealed that σac(ω) obeys the
universal law: σac(ω) = Aωs. The mechanism
of the ac charge transport across the layers of TlInS2 single crystals
was referred to the hopping over localized states near the Fermi level in
the frequency range >3.5 × 103 Hz. The temperature dependence
of σac(ω) for TlInS2 showed that σac
is thermally activated process. Both of ϵ1 and
ϵ2 decrease by increasing frequency and increase by
increasing temperature. Some parameters were calculated as: the density of
localized states near the Fermi level NF = 1.5 × 1020 eV-1 cm-3, the average time of charge carrier hoping between
localized states τ = 3.79 μs and the average hopping distance
R = 6.07 nm.